Gallium nitride nmos on si (111) co-integrated with a silicon pmos
AssigneeIntel Corporation
InventorsMarko Radosavljevic, Sansaptak Dasgupta, Valluri R. Rao, Han Wui Then
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Abstract
A complementary metal oxide semiconductor (CMOS) device that includes a gallium nitride n-type MOS and a silicon P-type MOS is disclosed. The device includes silicon 111 substrate, a gallium nitride transistor formed in a trench in the silicon 111 substrate, the gallium nitride transistor comprising a source electrode, a gate electrode, and a drain electrode. The device further includes a silicon/polysilicon layer formed over the gallium nitride transistor.
Claims20
An apparatus, comprising:
- a support structure comprising a silicon material;
- a trench in the support structure, the trench having sidewalls and a bottom, where the trench includes an island of the silicon material extending from a portion of the bottom of the trench;
- a semiconductor material comprising gallium and nitrogen, the semiconductor material provided in a portion of the trench that is closest to the bottom of the trench so that the semiconductor material encloses sidewalls and a top side of the island;
- and
- a transistor having a channel portion, the channel portion including a portion of the semiconductor material.
An apparatus, comprising:
- a support structure comprising a silicon material;
- a trench in the support structure;
- a semiconductor material comprising gallium and nitrogen, the semiconductor material being in a portion of the trench that is closest to a bottom of the trench;
- a transistor having a channel portion that includes a portion of the semiconductor material;
- and
- a silicon layer, provided in the trench so that the semiconductor material is between the silicon layer and the bottom of the trench, the silicon layer comprising silicon or polysilicon.
A method for forming a semiconductor device on a silicon substrate, the method comprising:
- forming a trench in the silicon substrate;
- providing a semiconductor material in the trench, the semiconductor material comprising gallium and nitrogen;
- forming a first transistor, the first transistor having a channel portion that includes a portion of the semiconductor material;
- and
- forming a second transistor, the second transistor having a channel portion that includes a portion of the silicon substrate.
Dependencies are inferred from the claim text.