Mechanically stable complementary field effect transistors

A method for constructing mechanically stable fins, the method comprising:

• forming a fin stack including a plurality of sacrificial layers;
• etching an opening within the fin stack to define inner spacers;
• filling the opening with a sacrificial material;
• depositing a dummy gate;
• selectively removing a first set of the plurality of sacrificial layers of the fin stack resulting in formation of a plurality of first gaps;
• filling the plurality of first gaps with a spacer material;
• recessing the fin stack to form channel fins;
• depositing a first type epitaxy between the channel fins;
• depositing a dielectric region over the first type epitaxy;
• depositing a second type epitaxy over the dielectric region;
• removing the dummy gate and a second set of the plurality of sacrificial layers resulting in formation of a plurality of second gaps;
• filling a first set of the plurality of second gaps with a first work function metal (WFM);
• and
• filling a second set of the plurality of second gaps with a second WFM.