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US 2020/0286786 A1Published application
Epitaxial growth and transfer via patterned two-dimensional (2d) layers
AssigneeMassachusetts Institute of Technology
InventorsJeehwan Kim, Sanghoon Bae, Yunjo Kim
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Abstract
Embodiments including apparatus, systems, and methods for nanofabrication are provided. In one example, a method of manufacturing a semiconductor device includes forming a two-dimensional (2D) layer comprising a 2D material on a first substrate and forming a plurality of holes in the 2D layer to create a patterned 2D layer. The method also includes forming a single-crystalline film on the patterned 2D layer and transferring the single-crystalline film onto a second substrate.
Claims10
A method of manufacturing a semiconductor device, the method comprising:
- growing a two-dimensional (2D) layer comprising a 2D material on a first substrate;
- forming a plurality of holes in the 2D layer to create a patterned 2D layer;
- forming a single-crystalline film on the patterned 2D layer;
- and
- transferring the single-crystalline film onto a second substrate.
2 more elements
Dependencies are inferred from the claim text.