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US 2020/0286742 A1Published application
Remote plasma etch using inkjet printed etch mask
AssigneeKateeva, Inc.
InventorsBrian E. Lassiter, Vera Steinmann
Life of this patent
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Abstract
Methods of processing substrates are described herein that include depositing a patterned polymer precursor layer by inkjet printing on a substrate comprising a dielectric material, curing the precursor layer to form a patterned polymer layer, and exposing the substrate, with the patterned polymer layer, to a remote plasma etch chemistry selective to the dielectric material. These methods can be performed on display substrates, particularly OLED and/or quantum dot display substrates.
Claims19
A method, comprising:
- depositing a patterned polymer precursor by inkjet printing on a substrate comprising a dielectric material;
- curing the precursor layer to form a patterned polymer;
- and
- exposing the substrate, with the patterned polymer, to a remote plasma etch chemistry selective to the dielectric material, wherein the remote plasma contains fluorine.
1 more element
(canceled)
A method, comprising:
- forming an encapsulant layer comprising a dielectric material on a display substrate;
- inkjet printing a patterned polymer precursor material on the encapsulant layer;
- curing the precursor material to form a patterned polymer layer;
- and removing a portion of the dielectric material by exposing the dielectric material to a remote plasma containing fluorine using the patterned polymer layer as a mask.
1 more element
(canceled)
A method, comprising:
- forming a first silicon nitride layer on an OLED display substrate;
- forming a polymer layer over the first silicon nitride layer;
- forming a second silicon nitride layer over, and encapsulating, the polymer layer;
- inkjet printing a patterned polymer precursor layer on a portion of the second silicon nitride layer to define a covered portion and an uncovered portion of the second silicon nitride layer;
- curing the precursor layer to form a patterned polymer layer;
- and
- etching the uncovered portion of the first and second silicon nitride layers using a fluorine containing remote plasma and using the patterned polymer layer as an etch mask.
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Dependencies are inferred from the claim text.