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US 2020/0286734 A1Published application
Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorsYoung-Gwang YOON, Yun-Ik SON, Jee-Hyun PARK
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Abstract
A method for fabricating a semiconductor device may include: forming a gate dielectric material over a substrate; sequentially forming a carbon-undoped polysilicon layer and a carbon-doped polysilicon layer over the gate dielectric material; doping the carbon-doped polysilicon layer with a dopant; forming a columnar crystalline polysilicon layer over the carbon-doped polysilicon layer doped with the dopant; and performing annealing to activate the dopant.
Claims11
A method for fabricating a semiconductor device, comprising:
- forming a gate dielectric material over a substrate;
- sequentially forming a carbon-undoped polysilicon layer and a carbon-doped polysilicon layer over the gate dielectric material;
- doping the carbon-doped polysilicon layer with a dopant;
- forming a columnar crystalline polysilicon layer over the carbon-doped polysilicon layer doped with the dopant;
- and
- performing annealing to activate the dopant.
3 more elements
Dependencies are inferred from the claim text.