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AssigneeHitachi High-Technologies Corporation
InventorsNorihiko IKEDA, Naoki YASUI, Kazuya YAMADA
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A plasma processing apparatus includes a processing chamber 101 where a wafer 114 is processed using plasma 111, a radio frequency power supply 106 configured to supply a radio frequency power for generating the plasma 111, a mechanism configured to form a magnetic field for forming ECR and to control a magnetic flux density thereof, and a sample stage 113 on which the wafer 114 is placed. The plasma processing apparatus further includes a control unit 107 configured to, based on image data of the plasma 111, monitor a height of ECR which is electron cyclotron resonance generated by an interaction between the radio frequency power and the magnetic field, and to control a frequency of the radio frequency power such that the monitored ECR height becomes a predetermined height.
A plasma processing apparatus comprising:
An ECR height monitor configured to monitor a height of ECR which is electron cyclotron resonance generated by an interaction between a radio frequency power for generating plasma and a magnetic field, wherein
A plasma processing method for processing a sample by using plasma, the plasma processing method comprising:
Dependencies are inferred from the claim text.