Ferroelectric capacitor with insulating thin film

An apparatus comprising:

• a bit-line;
• a word-line;
• a transistor coupled to the bit-line and the word-line;
• and
• a capacitor over the bit-line (COB), wherein the COB is coupled to ground and the transistor, wherein the COB comprises:
• a first electrode comprising metal;
• a second electrode comprising metal;
• a first structure comprising ferroelectric material, wherein the first structure is between and adjacent to the first and second electrodes;
• and
• a second structure adjacent to the first structure, wherein the second structure comprises insulative material.

A system comprising:

• a processor;
• and
• a memory coupled to the processor, wherein the memory includes:
• a ferroelectric material between two electrodes;
• an insulative material adjacent to the ferroelectric material;
• and
• a wireless interface to allow the processor to communicate with another device.