Non-volatile memory device and operating method thereof for performing an erase detect operation
AssigneeSamsung Electronics Co., Ltd.
InventorJi-sang LEE
Life of this patent
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Abstract
An operating method of a non-volatile memory device including a plurality of memory cells respectively connected to a plurality of word lines is provided. The operating method includes applying an erase detect voltage to a selected word line of the plurality of word lines to perform an erase detect operation on memory cells connected to the selected word line in response to a program command, applying a program voltage to the selected word line after the erase detect operation, and counting a number of undererased cells of the memory cells on which the erase detect operation has been performed.
Claims20
A non-volatile memory device comprising:
- a memory cell array including a plurality of memory cells respectively connected to a plurality of word lines;
- a page buffer unit including a plurality of page buffers respectively connected to memory cells connected to a selected word line of the plurality of word lines and configured to respectively store erase detect results of the memory cells before or in the middle of performing a program operation on the selected word line in response to a program command;
- and
- a counter connected to the plurality of page buffers and configured to count a number of undererased cells from the erase detect results.
A storage device comprising:
- a non-volatile memory device including a plurality of memory cells respectively connected to plurality of word lines;
- and
- a memory controller configured to transmit a program command to the non-volatile memory device,
- wherein the non-volatile memory device is configured to:
- perform an erase detect operation on memory cells connected to a selected word line of the plurality of word lines, by applying an erase detect voltage to the selected word line in response to the program command,
- perform a program operation on the memory cells, by applying a program voltage to the select word line, after the erase detect operation, and
- count a number of undererased cells of the memory cells on which the erase detect operation has been performed.
A programming method of a storage device including a non-volatile memory device and a memory controller, the method comprising:
- transmitting least significant bit (LSB) data, from the memory controller to the non-volatile memory device;
- in response to receiving the LSB data, by the non-volatile memory device, dumping the LSB data into a first data latch of the non-volatile memory device and performing an erase detect operation for checking a defective word line;
- transmitting a program command, from the memory controller to the non-volatile memory device;
- determining, by the non-volatile memory device, whether a number of undererased cells is greater than a reference bit count;
- and
- when the number of undererased cells is less than the reference bit count, performing a program operation by the non-volatile memory device.
Dependencies are inferred from the claim text.