Semiconductor storage device

A semiconductor storage device, comprising:

• a first wiring;
• a first resistance change element connected to the first wiring;
• a first nonlinear element connected to the first resistance change element;
• a second wiring connected to the first nonlinear element;
• and
• a peripheral circuit connected to the first wiring and the second wiring, wherein
• in a read operation for the first resistance change element, the peripheral circuit is configured to:
• increase a voltage between the first wiring and the second wiring until a current flowing through the first resistance change element is greater than a first current, where the voltage is determined according to a histogram of read threshold voltages of a plurality of memory cells in the semiconductor storage device.

A method comprising:

• selecting a first voltage according to a histogram of read threshold voltages of a plurality of memory cells, each memory cell including a resistance change element and nonlinear element coupled to each other;
• applying the first voltage on one of the plurality of memory cells;
• comparing a current flowing through the memory cell with a first current threshold;
• selectively increasing the voltage to the amplitude determined according to the histogram until the current reaches the first current threshold;
• and
• outputting a state of data stored in the memory cell based on the comparison of the current with a second current threshold.