Static random access memory method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Cheng WU, Wei Min CHAN, Yen-Huei CHEN, Hung-Jen LIAO, Ping-Wei WANG
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Abstract
A method of performing a write operation on a static random access memory (SRAM) bit cell includes activating the bit cell by supplying a signal to a p-type pass gate of the bit cell, the signal causing the p-type pass gate to be in a conductive state, using a p-type transistor of a write multiplexer to maintain a data line at a logically high voltage, and transferring bit information from the data line to the activated bit cell using the p-type pass gate.
Claims20
A method of performing a write operation on a static random access memory (SRAM) bit cell, the method comprising:
- activating the bit cell by supplying a signal to a p-type pass gate of the bit cell, the signal causing the p-type pass gate to be in a conductive state;
- using a p-type transistor of a write multiplexer to maintain a data line at a logically high voltage;
- and
- transferring bit information from the data line to the activated bit cell using the p-type pass gate.
A method of performing a read operation on a static random access memory (SRAM) bit cell, the method comprising:
- activating the bit cell by supplying a signal to a p-type pass gate of the bit cell, the signal causing the p-type pass gate to be in a conductive state;
- and
- transferring bit information from the activated bit cell to a data line using the p-type pass gate.
A method of performing a read operation on a static random access memory (SRAM) bit cell, the method comprising:
- activating the bit cell by supplying a signal to first and second p-type pass gates of the bit cell, the signal causing each of the first and second p-type pass gates to be in a conductive state;
- transferring complementary bit information from the activated bit cell to a first data line using the first p-type pass gate and to a second data line using the second p-type pass gate;
- and
- transferring the complementary bit information from the first and second data lines to a sense amplifier using n-type transistors of a read multiplexer.
Dependencies are inferred from the claim text.