Sub-amplifier, switching device and semiconductor device
AssigneeUltramemory Inc.
InventorYasutoshi YAMADA
Life of this patent
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AssigneeUltramemory Inc.
InventorYasutoshi YAMADA
Estimating the term…
Provided are a sub-amplifier, a switching device and a semiconductor device capable of simultaneously reading or writing many data items, while suppressing an increase in chip surface area, by using a single end signal line. A sub-amplifier SAP comprises: a first pre-charge circuit 110 that releases pre-charges of a pair of local wires LIOT/LIOB; a local inversion drive circuit 120 that, on the basis of a write signal WT, inverts and transfers write data to a sense amplifier SA from a main wire MIOB via one of the local wires LIOT/LIOB; a local non-inversion drive circuit 130 that, on the basis of the write signal WT, transfers the write data to the sense amplifier SA from the main wire MIOB via the other one of the local wires LIOT/LIOB; and a main inversion drive circuit 140 that, on the basis of a read signal RT, inverts and transfers read data to the main wire MIOB from one of the local wires LIOT/LIOB.
A sub-amplifier connected to a sense amplifier through a column switch and connected to a main wire through which write data and read data are transferred, the sub-amplifier comprising:
Dependencies are inferred from the claim text.