Magnetic multilayer film, magnetic memory element, magnetic memory and method for producing same

A magnetic multilayer film for a magnetic memory element, the magnetic multilayer film comprising:

• a conductive layer that includes a heavy metal layer containing a 5d transition metal;
• and
• a first ferromagnetic layer that is adjacent to the conductive layer and contains a ferromagnetic layer having a reversible magnetization,
• wherein
• a film thickness of the conductive layer is 6 nm or more, and
• a resistivity of the heavy metal layer is 100 μΩcm or more.

A method for producing a magnetic multilayer film or a magnetic memory element including the magnetic multilayer film, the magnetic multilayer film including:

• a heavy metal layer containing a 5d transition metal;
• and
• a first ferromagnetic layer that is adjacent to the heavy metal layer and contains a ferromagnetic layer having a reversible magnetization,
• wherein
• the heavy metal layer is deposited by magnetron sputtering, and
• a partial pressure of an inert gas in a film forming process is 0.1 Pa or more.

A method for producing a magnetic multilayer film or a magnetic memory element including the magnetic multilayer film, the magnetic multilayer film including:

• a heavy metal layer containing a 5d transition metal;
• and
• a first ferromagnetic layer that is adjacent to the heavy metal layer and contains a ferromagnetic layer having a reversible magnetization,
• wherein
• the heavy metal layer is deposited by magnetron sputtering, and
• a mean free path of a sputtered particle in a film forming process is shorter than a T/S distance.