Control logic assemblies and methods of forming a control logic device

A method of forming a control logic device, comprising:

• forming N-type line structures extending over a substrate in a first lateral direction;
• forming P-type line structures extending over the substrate in the first lateral direction and intervening between the N-type line structures in a second lateral direction perpendicular to the first lateral direction;
• removing portions of the N-type line structures and the P-type line structures to form first N-type pillar structures, first P-type pillar structures, and first linear trenches extending over the substrate in the second lateral direction;
• forming first linear isolation structures within the first linear trenches;
• removing portions of the first N-type pillar structures, the first P-type pillar structures, and the first linear isolation structures to form second N-type pillar structures, second P-type pillar structures, first isolation structures, and second linear trenches extending over the substrate in the first lateral direction;
• forming gate electrodes in the second linear trenches, some of the second linear trenches including only one of the gate electrodes and other of the second linear trenches including more than one of the gate electrodes;
• and
• forming second linear isolation structures in portions of the second linear trenches remaining after forming the gate electrodes.

A method of forming a control logic device, comprising:

• forming first line structures horizontally extending in parallel in a first direction and having a first conductivity type;
• forming second line structures horizontally extending in parallel in the first direction and horizontally alternating with the first line structures in a second direction orthogonal to the first direction, the second line structures having a second conductivity type different than the first conductivity type;
• patterning the first line structures and the second line structures to respectively form first pillar structures and second pillar structures therefrom;
• patterning the first pillar structures and the second pillar structures to respectively form third pillar structures and fourth pillar structures therefrom;
• and
• forming gate electrodes horizontally extending in parallel in the first direction and horizontally interposed between the third pillar structures and the fourth pillar structures in the second direction, at least two horizontally neighboring pillar structures of one or more of the third pillar structures and the fourth pillar structures having only one of the gate electrodes horizontally interposed therebetween in the second direction.