Organic thin film transistor, and fabricating method thereof

Abstract

An organic thin film transistor includes a transparent base substrate and a transparent gate layer formed on the transparent base substrate. A gate insulating layer includes an oxidized inorganic sub-layer and a non-oxidized organic sub-layer formed on the transparent gate layer. A source electrode and a drain electrode are buried within the non-oxidized organic sub-layer. Each of the source electrode and the drain electrode has a bottom side, and the bottom side surface of each of the source electrode and the drain electrode faces the transparent gate layer and contacts the non-oxidized organic sub-layer. The transparent gate layer is buried within the oxidized inorganic sub-layer, and the oxidized inorganic sub-layer covers a top surface and side surfaces of the transparent gate layer.

Dependencies are inferred from the claim text.