Memory device

A memory device, comprising:

• a bottom electrode;
• a resistance switching element over the bottom electrode;
• a top electrode over the resistance switching element;
• a first spacer extending along a sidewall of the resistance switching element toward the top electrode without extending to top electrode;
• and
• a second spacer extending along a sidewall of the first spacer and beyond a top of the first spacer.

A memory device, comprising:

• a bottom electrode;
• a resistance switching element over the bottom electrode;
• a capping layer over the resistance switching element;
• a top electrode over the capping layer;
• a first spacer extending along a sidewall of the resistance switching element and beyond a bottom of the capping layer;
• and
• a second spacer extending along a sidewall of the first spacer and beyond a top of the first spacer, wherein the second spacer is in contact with the top electrode.