Imaging element, solid state imaging device, and electronic device
AssigneeSony Corporation
InventorToshiki MORIWAKI
Life of this patent
Estimating the term…
Abstract
There is provided imaging devices and methods of forming the same, including a stacked structure body including a first electrode, a light-receiving layer formed on the first electrode, and a second electrode formed on the light-receiving layer, where the second electrode comprises an amorphous oxide comprising at least one of zinc and tungsten, and where the second electrode is transparent and electrically conductive and has absorption characteristics of 20% or more at a wavelength of 300 nm.
Claims30
An imaging device, comprising:
- a stacked structure body comprising:
- a first electrode,
- a light-receiving layer formed on the first electrode, and
- a second electrode formed on the light-receiving layer,
- wherein the second electrode comprises an amorphous oxide comprising at least one of zinc and tungsten, and
- wherein the second electrode is transparent and electrically conductive and has absorption characteristics of 20% or more at a wavelength of 300 nm.
An imaging device, comprising:
- a stacked structure body comprising:
- a first electrode,
- a light-receiving layer formed on the first electrode, and
- a second electrode formed on the light-receiving layer,
- wherein the second electrode comprises an amorphous oxide comprising at least one of zinc and tungsten,
- wherein the second electrode is transparent and electrically conductive, and
- wherein a thickness of the second electrode is about 3×10−8 m to about 5×10−8 m.
An imaging device, comprising:
- a plurality of imaging elements, w herein each of the imaging elements includes a stacked structure body comprising:
- a first electrode,
- a light-receiving layer formed on the first electrode, and
- a second electrode formed on the light-receiving layer, wherein the second electrode comprises an amorphous oxide comprising at least one of zinc and tungsten,
- wherein the second electrode is transparent and electrically conductive, and has absorption characteristics of 20% or more at a wavelength of 300 nm.
An imaging device comprising:
- a plurality of imaging elements, wherein each of the imaging elements includes a stacked structure body comprising:
- a first electrode,
- a light-receiving layer formed on the first electrode, and
- a second electrode formed on the light-receiving layer,
- wherein the second electrode comprises an amorphous oxide comprising at least one of zinc and tungsten,
- wherein the second electrode is transparent and electrically conductive, and
- wherein a thickness of the second electrode is about 3×10−8 m to about 5×10−8 m.
An electronic device comprising:
- a stacked structure body comprising
- a first electrode,
- a light-emitting/light-receiving layer formed on the first electrode, and
- a second electrode formed on the light-emitting/light-receiving layer,
- wherein the second electrode comprises an amorphous oxide comprising at least one of zinc and tungsten, and
- wherein the second electrode is transparent and electrically conductive and has absorption characteristics of 20% or more at a wavelength of 300 nm.
An electronic device comprising:
- a stacked structure body comprising
- a first electrode,
- a light-emitting/light-receiving layer formed on the first electrode, and
- a second electrode formed on the light-emitting/light-receiving layer,
- wherein the second electrode comprises an amorphous oxide comprising at least one of zinc and tungsten,
- wherein the second electrode is transparent and electrically conductive, and
- wherein a thickness of the second electrode is about 3×10−8 m to about 5×10−8 m.
Dependencies are inferred from the claim text.