US 2020/0266289 A1 · SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Abstract

A semiconductor device with favorable electrical characteristics and reliability is provided. A first insulator is formed. A second insulator is formed over the first insulator. An island-shaped oxide is formed over the second insulator. A stacked body of a third insulator and a conductor is formed over the oxide. The resistance of the oxide is selectively reduced by forming a film containing a metal element over the oxide and the stacked body. After a fourth insulator is formed over the second insulator, the oxide, and the stacked body, an opening portion exposing the second insulator is formed in the fourth insulator. A fifth insulator is formed over the second insulator and the fourth insulator. Oxygen introduction treatment is performed on the fifth insulator.

Claims7

Dependent claims

A method for manufacturing a semiconductor device, comprising:

forming a first insulator;
forming a second insulator over the first insulator;
forming an island-shaped oxide over the second insulator;
forming a stacked body of a third insulator and a conductor over the oxide;
selectively reducing the resistance of the oxide by forming a film comprising a metal element over the oxide and the stacked body;
after forming a fourth insulator over the second insulator, the oxide, and the stacked body, forming, in the fourth insulator, an opening portion exposing the second insulator;
forming a fifth insulator over the second insulator and the fourth insulator;
and
performing oxygen introduction treatment on the fifth insulator.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/642,998Filed 28 Aug 2018

Priority

JP 2017-1700565 Sep 2017

Published

20 Aug 2020

Term ends

Not estimatedThe source records don’t support an estimate.

Classification18 codes

H10D 30/6755
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
H10B 12/30
Dynamic random access memory [DRAM] devices: dRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
H10D 84/038
Using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology: using silicon technology, e.g. SiGe
H10D 88/00
Three-dimensional [3d] integrated devices

Semiconductor device and method for manufacturing semiconductor device

Life of this patent

Semiconductor device and method for manufacturing semiconductor device

Life of this patent

Abstract

Claims7