Vertical field effect transistor having improved uniformity

Abstract

A semiconductor device structure and method for fabricating the same. The semiconductor device structure includes a semiconductor fin and a liner in contact with end portions of the semiconductor fin. A first source/drain contacts the liner and sidewalls of the semiconductor fin. A gate structure is in contact with and surrounds the semiconductor fin. A second source/drain is formed above the first source/drain. The method includes forming, on a substrate, at least one semiconductor fin having a first spacer in contact with an upper portion of the semiconductor fin, and a second spacer in contact with the first spacer and a lower portion of the semiconductor fin. The semiconductor fin is patterned into a plurality of semiconductor fins. A liner is formed on exposed end portions of each semiconductor fin of the plurality of semiconductor fins.

Dependencies are inferred from the claim text.