Semiconductor device

A semiconductor device, comprising:

• a first electrode;
• a first semiconductor region provided on the first electrode, the first semiconductor region being of a first conductivity type and being electrically connected to the first electrode;
• a second semiconductor region provided on the first semiconductor region, the second semiconductor region being of a second conductivity type;
• a third semiconductor region selectively provided on the second semiconductor region, the third semiconductor region being of the first conductivity type;
• a gate electrode opposing, with a gate insulating portion interposed, a portion of the first semiconductor region, the second semiconductor region, and the third semiconductor region in a first direction perpendicular to a second direction, the second direction being from the first semiconductor region toward the second semiconductor region;
• a first conductive layer provided inside the first semiconductor region with a first insulating layer interposed, another portion of the first semiconductor region being provided between the first conductive layer and the second semiconductor region and between the first conductive layer and the gate electrode;
• and
• a second electrode provided on the second semiconductor region, the third semiconductor region, and the gate electrode, the second electrode being electrically connected to the second semiconductor region, the third semiconductor region, and the first conductive layer.