Feeder design with high current capability

A PiN diode structure in a SiC semiconductor material comprising a substrate, a drift layer on the substrate, at least two p-type grids in an n-type SiC material, wherein the n-type SiC material is on the drift layer, wherein the structure comprises an n-type epitaxially grown layer of SiC, wherein the epitaxially grown n-type layer is in contact with the at least two p-type grids and the n-type SiC material, wherein the n-type epitaxially grown layer is in contact with at least one epitaxially grown p-type region, wherein an Ohmic contact is in contact with the at least one epitaxially grown p-type region, wherein a projection of the at least one epitaxially grown p-type region in a plane parallel with the n-type substrate has a boundary line limiting the projection of the at least one epitaxially grown p-type region, wherein the p-type grid(s) is applied at least so that a projection of the p-type grid(s) in a plane parallel to the n-type substrate is on the boundary line and in a surrounding of the boundary line, so that the distance from the boundary line to any point in the surrounding is maximum 0.5 μm, and wherein the p-type grid(s) also is applied only so that the distance from the lower part of the at least one epitaxially grown p-type region to the upper part of the p-type grid(s) is in the range 0-5 μm, the direction up is given by the direction perpendicular away from the n-type substrate.