Semiconductor device with high charge carrier mobility materials on porous silicon

A semiconductor device, comprising:

• a silicon substrate;
• a porous silicon layer on the silicon substrate;
• a seal layer on the porous silicon layer;
• a first strain balancing intermediate layer and a second strain balancing intermediate layer, wherein the first strain balancing intermediate layer is on a first portion of the seal layer and the second strain balancing intermediate layer is on a second portion of the seal layer;
• and
• a first high charge carrier mobility material layer and a second high charge carrier mobility material layer, wherein the first high charge carrier mobility material layer is on the first strain balancing intermediate layer and the second high charge carrier mobility material layer is on the second strain balancing intermediate layer.