Integrated circuit device and method of manufacturing the same

An integrated circuit device comprising:

• a substrate including a conductive region;
• a lower electrode structure on the substrate;
• an upper electrode opposite to the lower electrode structure and on the substrate;
• and
• a dielectric layer between the lower electrode structure and the upper electrode,
• wherein the lower electrode structure includes,
• a main electrode part having an outer sidewall contacting the dielectric layer, an inner sidewall defining an internal space, and a lower surface above the conductive region relative to a surface of the substrate, the main electrode part including a first metal, and
• a bridge electrode part contacting the lower surface of the main electrode part and including a second metal different from the first metal.

An integrated circuit device comprising:

• a substrate including a conductive region;
• a lower electrode structure on the substrate;
• and
• a dielectric layer covering the lower electrode structure,
• wherein the lower electrode structure includes,
• a capping electrode part extending in a direction extending away from the conductive region,
• a main electrode part having an inner sidewall contacting the capping electrode part, and an outer sidewall contacting the dielectric layer, the main electrode part including a different material from a material of the capping electrode part,
• a bridge electrode part vertically spaced apart from the capping electrode part, the bridge electrode part between the main electrode part and the conductive region, and
• the main electrode part is between the capping electrode part and the bridge electrode part.