Imaging element, method of manufacturing imaging element, and imaging device
AssigneeSony Corporation
InventorsHAJIME KOBAYASHI, YUICHI TOKITA
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Abstract
An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and provided between the first electrode and the second electrode, in which the photoelectric conversion layer has an exciton charge separation rate of 1×101° s−1 to 1×1016 s−1 both inclusive in a p-n junction surface formed by the p-type semiconductor and the n-type semiconductor.
Claims18
An imaging element, comprising:
- a first electrode;
- a second electrode that faces the first electrode;
- and
- a photoelectric conversion layer between the first electrode and the second electrode, wherein
- the photoelectric conversion layer comprises a bulk-hetero junction structure, the bulk-hetero junction structure comprises a p-type semiconductor, an n-type semiconductor, and a p-n junction surface between the p-type semiconductor and the n-type semiconductor,
- the p-type semiconductor and the n-type semiconductor have controlled molecular orientations, and
- the photoelectric conversion layer has an exciton charge separation rate of 1×1010 s−1 to 1×1016 s−1.
A method of manufacturing an imaging element, the method comprising:
- forming a first electrode;
- forming a photoelectric conversion layer on the first electrode;
- and
- forming a second electrode on the photoelectric conversion layer, wherein
- the photoelectric conversion layer comprises a bulk-hetero junction structure,
- the bulk-hetero junction structure comprises a p-type semiconductor, an n-type semiconductor, and a p-n junction surface between the p-type semiconductor and the n-type semiconductor,
- the p-type semiconductor and the n-type semiconductor have controlled molecular orientations, and
- the photoelectric conversion layer has an exciton charge separation rate of 1×1010 s−1 to 1×1016 s−1.
An imaging device, comprising:
- a plurality of pixels, wherein each pixel of the plurality of pixels includes at least one imaging element, the at least one imaging element comprising:
- a first electrode;
- a second electrode that faces the first electrode;
- and
- a photoelectric conversion layer between the first electrode and the second electrode, wherein
- the photoelectric conversion layer comprises a bulk-hetero junction structure,
- the bulk-hetero junction structure comprises a p-type semiconductor, an n-type semiconductor, and a p-n junction surface between the p-type semiconductor and the n-type semiconductor,
- the p-type semiconductor and the n-type semiconductor have controlled molecular orientations, and
- the photoelectric conversion layer has an exciton charge separation rate of 1×1010 s−1 to 1×1016 s−1.
Dependencies are inferred from the claim text.