Magnetoresistive stack with seed region and method of manufacturing the same

A magnetoresistive stack comprising:

• an electrically conductive material;
• a seed region disposed above the electrically conductive material, wherein the seed region includes:
• at least one alloy layer, wherein the at least one alloy layer includes nickel and chromium, and has a combined nickel content and chromium content of at least 99 atomic percent;
• and
• at least one auxiliary layer;
• a fixed magnetic region disposed above the seed region, wherein the fixed magnetic region includes a synthetic antiferromagnetic structure comprising:
• a first ferromagnetic region disposed above the seed region;
• a coupling layer disposed on and in contact with the first ferromagnetic region;
• and
• a second ferromagnetic region disposed on and in contact with the coupling layer;
• one or more dielectric layers disposed above the second ferromagnetic region;
• and
• a free magnetic region disposed above the one or more dielectric layers.

A magnetoresistive stack comprising:

• an electrically conductive material;
• a seed region disposed above the electrically conductive material, wherein the seed region includes:
• at least one alloy layer, wherein the at least one alloy layer includes nickel and chromium;
• and
• at least one auxiliary layer;
• a dusting layer disposed on the seed region, wherein the dusting layer has a thickness of approximately 1 Å to approximately 12 Å;
• a fixed magnetic region disposed above the dusting layer, wherein the fixed magnetic region includes a synthetic antiferromagnetic structure comprising:
• a first ferromagnetic region disposed above the dusting layer;
• a coupling layer disposed on and in contact with the first ferromagnetic region;
• and
• a second ferromagnetic region disposed on and in contact with the coupling layer;
• one or more dielectric layers disposed above the second ferromagnetic region;
• and
• a free magnetic region disposed above the one or more dielectric layers.

A magnetoresistive stack comprising:

• an electrically conductive material;
• a seed region disposed above the electrically conductive material, wherein the seed region includes:
• a plurality of alloy layers, wherein at least one alloy layer includes nickel and chromium, and has a combined nickel content and chromium content of at least 99 atomic percent;
• and
• at least one auxiliary layer;
• a fixed magnetic region disposed above the seed region, wherein the fixed magnetic region includes a synthetic antiferromagnetic structure comprising:
• a first ferromagnetic region disposed above the seed region;
• a coupling layer disposed on and in contact with the first ferromagnetic region;
• and
• a second ferromagnetic region disposed on and in contact with the coupling layer;
• one or more dielectric layers disposed above the second ferromagnetic region;
• and
• a free magnetic region disposed above the one or more dielectric layers.