Stacked transistors with dielectric between channels of different device strata

An integrated circuit (IC) die, comprising:

• a first device stratum including a first channel material, wherein the first channel material includes a plurality of semiconductor wires;
• a second device stratum including a second channel material, wherein the second channel material includes a plurality of semiconductor wires;
• and
• a dielectric material between the first channel material and the second channel material, wherein the dielectric material is surrounded by a gate metal along a cross-section perpendicular to a longitudinal axis of a semiconductor wire of the first channel material.