US 2020/0266200 A1Published application

Semiconductor device having strap cell

AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.

InventorsKuo-Hung LO, Feng-Ming CHANG, Ying-Hsiu KUO, Ping-Wei WANG

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Abstract

A semiconductor device includes: a first well having a first conductivity-type extending along a first direction; second and third wells having a second conductivity-type and disposed on opposite sides of the first well in a second direction; a first array of bitcells and a second array of bitcells disposed on the first to third wells; a strap cell disposed on the first to third wells and between the first and second arrays and including first and second well pickup regions having the first conductivity-type, disposed on the first well, and spaced-apart from each other in the first direction, and third and fourth well pickup regions having the second conductivity-type and disposed on the second and third wells, respectively; first and second conductive patterns electrically connected to the first and second well pickup regions, respectively; and a third conductive pattern electrically connected to the third and fourth well pickup regions.

Claims20

Dependent claims

A semiconductor device, comprising:

an n-type well extending along a first direction;
a pair of p-type wells extending in the first direction disposed on opposite sides of the first well in a second direction, wherein the second direction is perpendicular to the first direction;
a strap cell disposed over the pair of p-type wells, the strap cell comprising:
first and second n-type well pickup regions disposed over the n-type well and spaced-apart from each other in the first direction, a doping concentration of the first and second well pickup regions being greater than a doping concentration of the n-type well;
and
third and fourth p-type well pickup regions disposed over the p-type wells, respectively, and spaced-apart from each other in the second direction, a doping concentration of the third and fourth well pickup regions being greater than a doping concentration of the p-type wells;
a counter-doping region disposed between the first and second well pickup regions and the third and fourth well pickup regions;
and
first and second conductive patterns electrically connected to the first and second well pickup regions and extending over the first and second well pickup regions, respectively.

6 more elements

A semiconductor device, comprising:

first and second wells having a first conductivity-type spaced apart from each other in a first direction;
a third well having a second conductivity-type different from the first conductivity-type, and including a first portion disposed on one side of the first and second wells, a second portion disposed on another side of the first and second wells, and a third portion connecting the first and second portions to each other and disposed between the first and second wells;
a strap cell disposed over the first, second and third wells and between the first and second arrays, the strap cell comprising:
first and second well pickup regions having the first conductivity-type, disposed over the first well and second well, respectively, and spaced-apart from each other in the first direction, a doping concentration of the first and second well pickup regions being greater than a doping concentration of the first and second wells;
and
a third well pickup region having the second conductivity-type, disposed over the third well and between the first and second well pickup regions, a doping concentration of the third well pickup region being greater than a doping concentration of the third well;
a counter-doping region disposed between the first and second well pickup regions and the third well pickup region;
and
first and second conductive patterns electrically connected to the first and second well pickup regions and extending over the first and second well pickup regions, respectively.

6 more elements

A semiconductor device, comprising:

a pair of n-type wells spaced apart from each other in a first direction;
p-type well having a first portion disposed on one side of the pair of n-type wells, a second portion disposed on another side of the pair of n-type wells, and a third portion connecting the first and second portions to each other and separating each of the pair of n-type wells from each other;
a strap cell disposed over the first, second, and third wells, the strap cell comprising:
first and second n-type well pickup regions, disposed over the pair of n-type wells, wherein the first n-type well pickup region is disposed over one of the n-type wells and the second n-type well pickup region is disposed over the other n-type well;
a p-type well pickup region disposed over the p-type well and between the pair of n-type well pickup regions;
a counter-doping region disposed between the pair of n-type well pickup regions and the p-type well pickup region;
and
first and second conductive patterns electrically connected to the first and second well pickup regions and extending over the first and second well pickup regions, respectively.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/867,513Filed 5 May 2020
Priority: 25 May 2018
Published: 20 Aug 2020
Term ends: Not estimatedThe source records don’t support an estimate.

Classification16 codes

H10B 10/12
Static random access memory [SRAM] devices: comprising a MOSFET load element
H10D 30/0243
Of fin field-effect transistors [FinFET]: using dummy structures having essentially the same shapes as the semiconductor bodies, e.g. to provide…
G11C 11/412
Forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt…
H10D 62/371
Of igfets: inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current

Family

Application62/676,600Us provisional application · filed 25 May 2018
Application16/234,386Continuation · filed 27 Dec 2018
Application16/867,513Continuation
US 10,672,775 B2Related patent
US 10,868,019 B2Related patent
US 2019/0363094 A1Published application
US 2020/0266200 A1This patent

From the US filing history. Foreign family members aren’t listed.

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