Semiconductor substrate die sawing singulation systems and methods
AssigneeSemiconductor Components Industries, LLC
InventorMichael J. SEDDON
Life of this patent
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Abstract
Implementations of methods of cutting a semiconductor substrate may include aligning a first saw blade substantially perpendicularly with a crystal plane of a non-cubic crystalline lattice of a semiconductor substrate coupled with a backmetal layer and cutting through at least a majority of the semiconductor substrate at an angle substantially perpendicular with the crystal plane of the non-cubic crystalline lattice of the semiconductor substrate. The method may also include aligning a second saw blade substantially perpendicularly with the semiconductor substrate and cutting entirely through the semiconductor substrate and the backmetal layer using the second saw blade.
Claims20
A method for cutting a semiconductor substrate comprising:
- aligning a first saw blade substantially perpendicularly with a crystal plane of a non-cubic crystalline lattice of a semiconductor substrate;
- cutting through at least a majority of the semiconductor substrate at an angle substantially perpendicular with the crystal plane of the non-cubic crystalline lattice of the semiconductor substrate
- aligning a second saw blade substantially perpendicularly with the semiconductor substrate;
- and
- cutting entirely through the semiconductor substrate using the second saw blade.
A method for cutting a silicon carbide semiconductor substrate comprising:
- aligning a first saw blade substantially perpendicularly with an off angle of a crystal lattice of a silicon carbide semiconductor substrate;
- cutting through at least a majority of the silicon carbide semiconductor substrate with the first saw blade at a substantially perpendicular angle;
- aligning a second saw blade substantially perpendicularly with the silicon carbide semiconductor substrate;
- and
- cutting entirely through the silicon carbide semiconductor substrate using the second saw blade.
A method for singulating a silicon carbide semiconductor substrate comprising:
- aligning a first saw blade substantially parallel with a c-axis of a silicon carbide semiconductor substrate;
- cutting through at least a majority of the silicon carbide semiconductor substrate at an angle substantially parallel with the c-axis of the silicon carbide semiconductor substrate;
- aligning a second saw blade substantially perpendicularly with the silicon carbide semiconductor substrate;
- and
- singulating the silicon carbide semiconductor substrate into a plurality of semiconductor die by cutting entirely through the silicon carbide semiconductor substrate using the second saw blade.
Dependencies are inferred from the claim text.