High-frequency integrated circuit
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorsShinji Ohno, Toshifumi Ishimori, Mitsuru Sugawara
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AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorsShinji Ohno, Toshifumi Ishimori, Mitsuru Sugawara
Estimating the term…
According to one embodiment, a first switch controls conduction between first and second nodes according to a potential on a first control node. A second switch controls conduction between the first control node and a first potential node according to a potential on a second control node. A first circuit includes first and second output nodes respectively coupled to the first and second control nodes, and outputs at the second output node a potential that brings the second switch out of conduction while outputting a first potential at the first output node. The first circuit has a high impedance at the first output node while outputting at the second output node a potential that brings the second switch into conduction.
A high-frequency integrated circuit comprising:
2-13. (canceled)
A high-frequency integrated circuit comprising:
A high-frequency integrated circuit comprising:
Dependencies are inferred from the claim text.