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US 2020/0227235 A1Published application
Charged Particle Beam Lithography System
AssigneeKkt Holdings Syndicate
InventorsTzu-Yi Kuo, Yu-Kuang Tseng
Life of this patent
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Abstract
A collimated electron beam is illuminated to a grounded metal mask such that patterns on the mask can be transferred to a substrate identically. In a preferred embodiment, a linear electron source can be provided for enhancing lithographic throughput. The metal mask is adjacent to the substrate, but does not contact with substrate.
Claims19
A lithography apparatus, comprising:
- a charged particle source for providing a charged particle beam;
- a charged particle optical element for collimating the charged particle beam onto a sample;
- and
- a grounded metallic mask between said charged particle source and the sample, wherein said metallic mask includes at least a pattern such that a portion of the charged particle beam is blocked by said metallic mask.
1 more element
An electron beam lithography apparatus, comprising:
- an electron source providing an electron beam;
- a condenser lens for condensing the electron beam;
- a linear condensing lens, below said condenser lens, for linear collimating the electron beam along a first direction on a sample;
- a grounded metallic mask between said linear condensing lens and the sample, wherein said metallic mask includes at least a pattern such that a portion of the electron beam is blocked by said metallic mask;
- and
- a maglev stage for mounting the sample and moving in a second direction perpendicular to the first direction.
3 more elements
An apparatus for assembling a plurality of clone masks into an array mask on a mesh for supporting the plurality of clone masks, comprising:
- an adjustable platform for temporally fasten one of the plurality of clone masks to fit one opening of the mesh;
- and
- a calibration and alignment tool for measuring the one of the plurality of clone masks such that said the adjustable platform moves the one of the plurality of clone masks to a pre-determined position.
Dependencies are inferred from the claim text.