Magnetic tunnel junction ring oscillator with tunable frequency and methods for operating the same

A method of operating a ring oscillator disposed on an integrated circuit, wherein the ring oscillator comprises:

• an input voltage terminal;
• an output voltage terminal;
• an odd number of at least three inverters disposed electrically in series with one another between the input voltage terminal and the output voltage terminal, each of the at least three inverters comprising an N-type metal oxide semiconductor transistor and one or more magnetic tunnel junctions disposed electrically in series with the N-type metal oxide semiconductor transistor, and the N-type metal oxide semiconductor transistor of each of the at least three inverters selectively tunable with regard to either or both of its threshold voltage and its effective channel width,
• wherein the method comprises:
• sending a first control signal to at least one of the N-type metal oxide semiconductor transistors to operate at a selected tuning level, with regard to either or both of its threshold voltage and its effective channel width, of a plurality of tuning levels;
• sending a second control signal to at least one of the one or more magnetic tunnel junctions to operate at a selected state, either parallel or anti-parallel;
• and
• sending a third control signal to the NMOS transistor of one of the at least three inverters to operate in an inactive or “off” state.