Scan and corrector magnet designs for high throughput scanned beam ion implanter

An ion implantation system, comprising:

• an ion source configured to form an ion beam;
• a mass analyzer configured to mass analyze the ion beam;
• a scanner power source configured to provide a scan waveform;
• a scanner configured to selectively scan the ion beam along a scan path based on the scan waveform, therein defining a scanned ion beam;
• and
• a corrector apparatus configured to transport the scanned ion beam toward a workpiece at a generally constant angle of incidence across the workpiece, wherein one or more of the scanner and corrector apparatus are configured to provide the scanned ion beam having a non-uniform flux profile without modifying the scan waveform as the ion beam is scanned across the workpiece.

A method for providing a non-uniform flux of a scanned ribbon ion beam, the method comprising:

• providing an ion beam to a scanner;
• providing a scan waveform having a time-varying potential to the scanner, therein scanning the ion beam across a scan path and generally defining a scanned ion beam comprised of a plurality of beamlets;
• and
• passing the scanned ion beam through a corrector apparatus, wherein the corrector apparatus is configured to direct the scanned ion beam toward a workpiece at a generally constant angle of incidence across the workpiece, and wherein the corrector apparatus is further configured to provide a non-uniform flux profile of the scanned ion beam at the workpiece without modifying the scan waveform.