Back to results
US 2020/0102271 A1Published application
Onium salt, resist composition, and pattern forming process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsMasaki Ohashi, Kazuya Honda, Yuki Suka, Yuki Kera
Life of this patent
Estimating the term…
Abstract
A novel onium salt having formula (1) and a resist composition comprising the same as a quencher are provided. When the resist composition is processed by photolithography using high-energy radiation, there is formed a resist pattern which is improved in LWR and CDU. In formula (1), R1, R2 and R3 each are a C1-C20 monovalent hydrocarbon group which may contain a heteroatom exclusive of fluorine, and Z+ is a sulfonium, iodonium or ammonium cation.
Claims8
An onium salt having the formula (1):
- wherein R1, R2 and R3 are each independently a C1-C20 straight, branched or cyclic monovalent hydrocarbon group which may contain a heteroatom exclusive of fluorine, R2 and R3 may bond together to form a ring with the sulfur atoms to which they are attached and the carbon atom in the formula, and Z+ is a sulfonium, iodonium or ammonium cation.
Dependencies are inferred from the claim text.