Semiconductor memory device

A semiconductor memory device, comprising:

• a conductive body;
• a stacked body provided on the conductive body, the stacked body including a plurality of electrode films arranged to be separated from each other along a first direction away from the conductive body;
• a semiconductor member extending in the first direction, being provided inside the stacked body, and being connected to the conductive body;
• and
• a charge storage member provided between the electrode film and the semiconductor member,
• the semiconductor members being arranged periodically along a second direction in a first region and in a second region, the first region and the second region being separated from each other in the second direction, the second direction crossing the first direction,
• the arrangement of the semiconductor members in the second region being shifted half a period with respect to the arrangement of the semiconductor members in the first region.

A semiconductor memory device, comprising:

• a conductive body;
• a stacked body provided on the conductive body, the stacked body including a plurality of electrode films arranged to be separated from each other along a first direction away from the conductive body;
• a semiconductor member extending in the first direction, being provided inside the stacked body, and being connected to the conductive body;
• and
• a charge storage member provided between the electrode film and the semiconductor member,
• the semiconductor members being arranged periodically along a second direction in a first region and in a second region, the first region and the second region being separated from each other in the second direction, the second direction crossing the first direction,
• the arrangement of the semiconductor members in the second region having a mirror-image relationship with respect to the arrangement of the semiconductor members in the first region.