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US 2020/0091173 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeToshiba Memory Corporation
InventorsOsamu MIYAGAWA, Takahiro TOMIMATSU
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Abstract
A semiconductor device according to one embodiment includes a semiconductor substrate and a stack body including first films and second films alternately stacked in a first direction perpendicular to the semiconductor substrate, and including a stepped end portion. Each of the first films has a thick film portion located on the end portion, and an eave portion hanging over from a upper part of the thick film portion to the side in a second direction parallel to the semiconductor substrate.
Claims7
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a stack body including first films and second films alternately stacked in a first direction perpendicular to the semiconductor substrate, and including a stepped end portion, wherein
- each of the first films includes a thick film portion located on the end portion, and an eave portion hanging over from a upper part of the thick film portion to a side in a second direction parallel to the semiconductor substrate.
1 more element
A manufacturing method of a semiconductor device, the method comprising:
- processing an end portion of a stack body including first films and second films alternately stacked in a first direction perpendicular to a semiconductor substrate in a stepped form;
- covering the end portion with a third film of a same material as that of the second film;
- partially removing the third film to expose the first films on respective steps while leaving the third film on riser portions of the end portion;
- covering the third film left on the riser portions and the first films exposed on the respective steps with a fourth film of a same material as that of the first films to form thick film portions on the first films;
- and
- etching parts of the fourth film covering a side surface of the third film to form eave portions hanging over in a second direction parallel to the semiconductor substrate from upper parts of the thick film portions.
3 more elements
Dependencies are inferred from the claim text.