Memory device and manufacturing method for the same

Abstract

A memory device and a manufacturing method for the same are provided. The memory device comprises a NAND memory string. The NAND memory string includes a U-shape channel, a first inversion gate electrode and a second inversion gate electrode. The U-shape channel includes a bottom channel surface, a first outer channel sidewall and a second outer channel sidewall. The bottom channel surface is between the first outer channel sidewall and the second outer channel sidewall opposing to the first outer channel sidewall. The first inversion gate electrode is electrically coupled to the U-shape channel and is disposed under bottom channel surface. The second inversion gate electrode is electrically coupled to the U-shape channel and is disposed outside the first outer channel sidewall, and separated from the first inversion gate electrode.

Dependencies are inferred from the claim text.