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US 2020/0091080 A1Published application
Semiconductor device and method for manufacturing the same
AssigneeToshiba Memory Corporation
InventorsSatoshi WAKATSUKI, Katsuaki NATORI
Life of this patent
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Abstract
A semiconductor device includes a substrate. The semiconductor device further includes a wiring layer provided on the substrate, the wiring layer including a molybdenum layer including oxygen atoms as an impurity.
Claims17
A semiconductor device comprising:
- a substrate;
- and
- a wiring layer provided on the substrate, the wiring layer including a molybdenum layer containing oxygen atoms as an impurity.
A method for manufacturing a semiconductor device, the method including forming a wiring layer on a substrate, the wiring layer comprising a molybdenum layer including oxygen atoms as an impurity.
Dependencies are inferred from the claim text.