Method and device isolation structure in finfet
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorMin Gyu Sung
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Abstract
A method of forming a semiconductor device. The method may include providing a semiconductor device structure. The semiconductor device structure may include a semiconductor fin; and a mask, disposed over the semiconductor fin, the mask defining a plurality of openings, wherein the semiconductor fin is exposed in the plurality of openings. The method may further include directing angled ions into the plurality of openings, wherein a plurality of trenches are formed in the semiconductor fin, wherein a given trench of the plurality of trenches comprises a reentrant profile.
Claims13
A semiconductor device structure, comprising:
- a semiconductor fin, disposed on a substrate, the semiconductor fin including a fin portion;
- a first trench isolation structure, arranged on a first end of the fin portion;
- and
- a second trench isolation structure, arranged on a second end of the fin portion, opposite the first end, wherein the first trench isolation structure and the second trench isolation structure comprise a reentrant profile.
Dependencies are inferred from the claim text.