Self-Protective Layer Formed on High-K Dielectric Layer

A semiconductor device comprising:

• a metal phosphate located over a semiconductor fin over a substrate, the metal phosphate comprising a first metallic element;
• a gate dielectric located on a first side of the metal phosphate, the gate dielectric comprising the first metallic element;
• and
• a conductive material located on a second side of the metal phosphate opposite the first side of the metal phosphate.

A semiconductor device comprising:

• a first semiconductor fin over a substrate;
• a second semiconductor fin over the substrate;
• a first gate stack overlying the first semiconductor fin, the first gate stack comprising:
• a first gate dielectric comprising a first metal oxide;
• a first work function layer;
• and
• a first metal phosphate extending between the first gate dielectric and the first work function layer, the first metal phosphate and the first metal oxide having a common metal element;
• and
• a second gate stack overlying the second semiconductor fin, the second gate stack comprising:
• a second gate dielectric comprising the first metal oxide;
• and
• a second work function layer different from the first work function layer.