Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A substrate processing apparatus comprising:

• a process chamber in which a substrate is processed;
• a precursor supply system configured to supply a precursor including a cyclic structure composed of silicon and carbon and also including halogen to the substrate in the process chamber;
• a nitriding agent supply system configured to supply a nitriding agent to the substrate in the process chamber;
• a first oxidizing agent supply system configured to supply a first oxidizing agent to the substrate in the process chamber;
• a second oxidizing agent supply system configured to supply a second oxidizing agent to the substrate in the process chamber;
• and
• a controller configured to control the precursor supply system, the nitriding agent supply system, the first oxidizing agent supply system and the second oxidizing agent supply system to perform a process in the process chamber, the process including:
• (a) forming a first film including the cyclic structure and also including nitrogen so as to fill a recess formed in a surface of the substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
• supplying the precursor to the substrate having the recess formed on its surface;
• and
• supplying the nitriding agent to the substrate;
• (b) converting the first film into a second film including the cyclic structure and also including oxygen by supplying the first oxidizing agent to the substrate;
• and
• (c) converting the second film into a third film including silicon and oxygen and not including carbon and nitrogen by supplying the second oxidizing agent to the substrate.

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process in a process chamber of the substrate processing apparatus, the process comprising:

• (a) forming a first film including a cyclic structure composed of silicon and carbon and also including nitrogen so as to fill a recess formed in a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
• supplying a precursor including the cyclic structure and also including halogen to the substrate having the recess formed on its surface;
• and
• supplying a nitriding agent to the substrate;
• (b) converting the first film into a second film including the cyclic structure and also including oxygen by supplying a first oxidizing agent to the substrate;
• and
• (c) converting the second film into a third film including silicon and oxygen and not including carbon and nitrogen by supplying a second oxidizing agent to the substrate.