Methods for device fabrication using pitch reduction
AssigneeMicron Technology, Inc.
InventorsLuan C. Tran, Raghupathy Giridhar
Life of this patent
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Abstract
Embodiments of a method for device fabrication by reverse pitch reduction flow include forming a first pattern of features above a substrate and forming a second pattern of pitch-multiplied spacers subsequent to forming the first pattern of features. In embodiments of the invention the first pattern of features may be formed by photolithography and the second pattern of pitch-multiplied spacers may be formed by pitch multiplication. Other methods for device fabrication are provided.
Claims20
A method of fabricating an electronic device, comprising:
- forming a first pattern of features adjacent to a material;
- forming a second pattern of pitch-multiplied spacers subsequent to forming the first pattern of features, the second pattern of pitch-multiplied spacers laterally adjacent to the first pattern of features and comprising a smaller width than a width of the first pattern of features;
- using a combined pattern of the first pattern of features and the second pattern of pitch-multiplied spacers to remove portions of a hardmask material exposed through the combined pattern;
- and
- transferring the combined pattern to one or more materials underlying the hardmask material.
A method of fabricating an electronic device, comprising:
- forming a first pattern of features and a second pattern of features adjacent to a first mask, the features of the first pattern having a first width and the features of the second pattern having a second width less than the first width;
- forming a second mask over the first pattern of features and the second pattern of features, a portion of the first pattern of features and the second pattern of features exposed through the second mask;
- removing the exposed portions of the first pattern of features and the second pattern of features to form a combined pattern of features;
- and
- transferring the combined pattern of features to one or more materials adjacent to the first mask.
A method of forming an electronic device, comprising:
- forming a first pattern of features over a first mask over a material, the features of the first pattern of features comprising a first width;
- forming features in a selectively definable material over the first mask;
- laterally removing a portion of the features in the selectively definable material to form modified features in the selectively definable material;
- conformally forming a spacer material over the modified features, the first mask, and the first pattern of features;
- removing a portion of the spacer material to expose a portion of the first mask between each of the modified features in the selectively definable material and to form spacers adjacent to each of the modified features in the selectively definable material;
- removing the modified features to form a second pattern of spacers over the first mask, the spacers of the second pattern of spacers having a second width less than the first width of the first pattern of features;
- forming a second mask over the first pattern of features and the second pattern of spacers, the second mask leaving portions of the second pattern of spacers exposed;
- removing the exposed portions of the second pattern of spacers;
- and
- transferring the first pattern of features and the second pattern of spacers to the first mask and to one or materials underlying the first mask.
Dependencies are inferred from the claim text.