Semiconductor device including resistor structure
AssigneeSamsung Electronics Co., Ltd.
InventorsTae-Hee Lee, Hee-Sung Kam, Kyoung-Hoon Kim
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate including a resistor region, a plurality of lower patterns in the resistor region, and a resistor line pattern on the plurality of lower patterns and the substrate of the resistor region. The plurality of lower patterns extend in a first direction parallel to a surface of the substrate and are spaced apart from each other in a second direction perpendicular to the first direction and parallel to the surface of the substrate. The resistor line pattern extends in the second direction. The resistor line pattern on the lower patterns has an upper surface and a lower surface protruding in a third direction perpendicular to the surface of the substrate.
Claims20
A semiconductor device comprising:
- a substrate comprising a resistor region;
- a plurality of lower patterns in the resistor region, wherein the plurality of lower patterns extend in a first direction parallel to a surface of the substrate and are spaced apart from each other in a second direction perpendicular to the first direction and parallel to the surface of the substrate;
- and
- a resistor line pattern on the plurality of lower patterns and the substrate of the resistor region, wherein the resistor line pattern extends in the second direction, and the resistor line pattern on the lower patterns has a raised portion in a third direction perpendicular to the surface of the substrate to form a wave shape.
A semiconductor device comprising:
- a substrate comprising a cell region and a resistor region;
- a plurality of lower patterns in the resistor region, wherein the plurality of lower patterns extend in a first direction parallel to a surface of the substrate and are spaced apart from each other in a second direction perpendicular to the first direction and parallel to the surface of the substrate;
- a resistor line pattern on the plurality of lower patterns and the substrate of the resistor region, wherein the resistor line pattern extends in the second direction, and the resistor line pattern on the lower patterns has an upper surface and a lower surface protruding in a third direction perpendicular to the surface of the substrate;
- and
- a cell pattern in the cell region, wherein the cell pattern includes a same material and a same stack structure as each of the plurality of lower patterns.
A semiconductor device comprising:
- a substrate comprising a cell region, a transistor region, and a resistor region;
- a plurality of lower patterns in the resistor region, wherein the plurality of lower patterns extend in a first direction parallel to a surface of the substrate and are spaced apart from each other in a second direction perpendicular to the first direction and parallel to the surface of the substrate;
- a resistor line pattern on the plurality of lower patterns and the substrate of the resistor region, wherein the resistor line pattern extends in the second direction, and the resistor line pattern on the lower patterns has an upper surface and a lower surface protruding in a third direction perpendicular to the surface of the substrate;
- a cell pattern in the cell region, wherein the cell pattern includes a same material and a same structure as each of the plurality of lower patterns, and
- a gate structure in the transistor region.
Dependencies are inferred from the claim text.