Back to results
US 2020/0051910 A1Published application
Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorTakeshi MIURA
Life of this patent
Estimating the term…
Abstract
An insulating film (2) is provided on a base material (1). The insulating film (2) is a compressive film in which a stress is applied in a direction of peeling away from the base material at a central portion. A recess (3) is formed in the central portion of the insulating film (2) so that a thickness is partially reduced.
Claims6
-4. (canceled)
A semiconductor device comprising:
- a first wiring;
- an insulating film provided on the first wiring and having an opening;
- and
- a second wiring provided on the insulating film and connected to the first wiring through the opening,
- wherein a recess is provided in the insulating film in a lower part of an end portion of the second wiring so that a thickness is partially reduced, and
- the insulating film is separated in the recess.
3 more elements
-7. (canceled)
Dependencies are inferred from the claim text.