Single crystal pulling apparatus

A single crystal pulling apparatus comprising:

• a heater for heating a raw material in a crucible to thereby form a raw-material melt;
• a chamber for housing the heater and the crucible;
• and
• a dopant supplying means for supplying a sublimable dopant to the raw-material melt, and pulling a silicon single crystal from the raw-material melt according to a Czochralski method, wherein
• the dopant supplying means comprises:
• a charging device provided outside the chamber and configured to store the dopant and charge the dopant into the chamber;
• a sublimation room provided inside the chamber and configured to hold and sublimate the dopant charged from the charging device;
• a carrier gas-introducing device configured to introduce a carrier gas into the sublimation room;
• and
• a blowing device configured to blow the dopant sublimated in the sublimation room together with the carrier gas from the carrier gas-introducing device onto a surface of the raw-material melt, and
• the blowing device comprises a tube connected to the sublimation room and a plurality of blowing ports such that the sublimated dopant is scattered from the plurality of blowing ports via the tube and blown onto the surface of the raw-material melt.