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AssigneeDongjin Semichem Co., Ltd.
InventorsHyejung Park, Mingun Lee, Chang Yong Park, Min-Sung Park, Sunghoon Jin, Goo-Hwa Lee, Jongdai Park, Jaehyun Kim
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The present invention relates to a chemical mechanical polishing slurry composition, and more specifically, to a chemical mechanical polishing slurry composition that can polish an insulating film such as a silicon nitride film or a metal film such as tungsten alone or simultaneously, and particularly, can easily control the polishing speed, and thus minimize an interlayer step difference of a semiconductor device by using a compound having a phosphate group as an agent for controlling polishing selectivity, and selectively using a tertiary amine compound together with the agent for controlling polishing selectivity, and a method for polishing a semiconductor substrate using the same.
A chemical mechanical polishing slurry composition comprising:
A chemical mechanical polishing slurry composition comprising, based on the total weight of the slurry composition, 0.01 to 10 wt % of an abrasive, 0.0001 to 10 wt % of an agent for controlling polishing selectivity, 0.00001 to 1 wt % of a catalyst, 0.0005 to 5 wt % of a pH adjusting agent, 0.0001 to 0.1 wt % of a biocide, and the remaining amount of water.
Dependencies are inferred from the claim text.