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US 2020/0027962 A1Published application
Semiconductor device and method for manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsMasafumi HAMAGUCHI, Shinji KAWAHARA
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Abstract
According to one embodiment, a semiconductor device includes a memory cell array including a first memory cell provided on a substrate and a second memory cell provided on the substrate. The memory cell array includes a charge storage layer provided on the substrate and a control electrode provided on the charge storage layer. A coupling ratio of the second memory cell is different from a coupling ratio of the first memory cell.
Claims15
A method for manufacturing a semiconductor device, comprising:
- forming a first insulating film, a charge storage layer on the first insulating film, and a second insulating film on the charge storage layer above a substrate;
- and
- changing a dielectric constant of an area of a part of the second insulating film.
A method for manufacturing a semiconductor device, comprising:
- forming a first insulating film on a substrate;
- forming a charge storage layer on the first insulating film;
- forming a second insulating film on the charge storage layer;
- and
- changing a dielectric constant of a region of the second insulating film by doping the region with a first dopant.
2 more elements
Dependencies are inferred from the claim text.