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US 2020/0006642 A1Published application
Magnetoresistance effect element
AssigneeTDK Corporation
InventorsShinto ICHIKAWA, Katsuyuki NAKADA, Tomoyuki SASAKI
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Abstract
A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer. The tunnel barrier layer is a stacked body including one or more first oxide layers having a spinel structure and one or more second oxide layers having a spinel structure with a composition which is different from a composition of the first oxide layer.
Claims9
A magnetoresistance effect element, comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- and
- a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer,
- wherein the tunnel barrier layer is a stacked body including one or more first oxide layers having a spinel structure and one or more second oxide layers having a spinel structure with a composition which is different from a composition of the first oxide layer.
2 more elements
Dependencies are inferred from the claim text.