Magnetoresistance effect element

Abstract

A magnetoresistance effect element has favorable symmetry of an MR ratio even if the sign of a bias voltage is different, which is capable of reversing magnetization to a current, which has a high MR ratio. A magnetoresistance effect element includes a laminate in which an underlayer, a first ferromagnetic metal layer, a tunnel barrier layer, and a second ferromagnetic metal layer are laminated in that order. The underlayer is made of one or more selected from a group containing of TiN, VN, NbN, and TaN, or mixed crystals thereof. The tunnel barrier layer is made of a compound having a spinel structure and represented by the following composition formula (1): AxGa2Oy, where A is a non-magnetic divalent cation and represents a cation of at least one element among magnesium, zinc, and cadmium, x is a number satisfying 0<x≤2, and y is a number satisfying 0<y≤4.

Dependencies are inferred from the claim text.