Systems and methods for mitigating encroachment in magnetoresistive devices

Abstract

As magnetoresistive stack structures are made in increasing smaller form factors, encroachment in layers of magnetoresistive stack structures may affect the energy required to write magnetic states to the stack structures. Encroachment may be observed as, e.g., an increase in switching voltage (VC) and an increase in switching voltage distribution (VCσ) as magnetoresistive stack size decreases, caused by differences between a peripheral portion and an inner portion of a region in a magnetoresistive stack. Embodiments of the present disclosure relate to systems and methods for controlling, reducing, or otherwise mitigating the effects of encroachment in magnetoresistive stacks.

Dependencies are inferred from the claim text.