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US 2020/0006539 A1Published application
IGBT Having a Barrier Region
AssigneeInfineon Technologies AG
InventorsAlexander Philippou, Christian Jaeger, Johannes Georg Laven, Antonio Vellei
Life of this patent
Estimating the term…
Abstract
An IGBT having a barrier region is presented. A power unit cell of the IGBT has at least two trenches that may both extend into the barrier region. The barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by means of the drift region. The barrier region can be electrically floating.
Claims25
An IGBT, comprising:
- a semiconductor body coupled to a first load terminal and a second load terminal of the IGBT and comprising a drift region configured to conduct a load current between the first and the second load terminals, the drift region comprising dopants of a first conductivity type;
- a power unit cell comprising:
- a control trench having a control trench electrode and a further trench having a further trench electrode electrically coupled to the control trench electrode;
- an active mesa comprising a source region with dopants of the first conductivity type and electrically connected to the first load terminal and a channel region with dopants of a second conductivity type, the channel region separating the source region and the drift region, wherein in the active mesa, at least a respective section of each of the source region, the channel region and the drift region are arranged adjacent to a sidewall of the control trench, and wherein the control trench electrode is configured to receive a control signal from a control terminal of the IGBT and to control the load current in the active mesa, the further trench electrode not being configured to control the load current;
- and
- an electrically floating semiconductor barrier region in the semiconductor body and comprising dopants of the second conductivity type, the barrier region laterally overlapping with both the active mesa and a bottom of the further trench.
3 more elements
An IGBT, comprising:
- a semiconductor body coupled to a first load terminal and a second load terminal of the IGBT and comprising a drift region configured to conduct a load current between the first and the second load terminals, the drift region comprising dopants of a first conductivity type;
- a power unit cell comprising:
- a control trench having a control trench electrode and a further trench having a further trench electrode;
- an active mesa comprising a source region with dopants of the first conductivity type and electrically connected to the first load terminal and a channel region with dopants of a second conductivity type, the channel region separating the source region and the drift region, wherein, in the active mesa, at least a respective section of each of the source region, the channel region and the drift region are arranged adjacent to a sidewall of the control trench, and wherein the control trench electrode is configured to receive a control signal from a control terminal of the IGBT and to control the load current in the active mesa;
- and
- an electrically floating semiconductor barrier region in the semiconductor body and comprising dopants of the second conductivity type, the barrier region laterally overlapping with both an entire width of the active mesa and a bottom of the further trench.
3 more elements
An IGBT, comprising:
- a semiconductor body coupled to a first load terminal and a second load terminal of the IGBT and comprising a drift region configured to conduct a load current between the first and the second load terminals, the drift region comprising dopants of a first conductivity type;
- a power unit cell comprising:
- a control trench having a control trench electrode and a further trench having a further trench electrode;
- an active mesa comprising a source region with dopants of the first conductivity type and electrically connected to the first load terminal and a channel region with dopants of a second conductivity type, the channel region separating the source region and the drift region, wherein, in the active mesa, at least a respective section of each of the source region, the channel region and the drift region are arranged adjacent to a sidewall of the control trench, and wherein the control trench electrode is configured to receive a control signal from a control terminal of the IGBT and to control the load current in the active mesa;
- and
- an inactive mesa adjacent the further trench, wherein a transition between the first load terminal and the inactive mesa provides an electrical insulation at least for charge carriers of the first conductivity type;
- and
- a semiconductor barrier region in the semiconductor body and comprising dopants of the second conductivity type,
- wherein:
- a respective lower portion of both the control trench and the further trench extends into the barrier region, each lower portion being formed by a deepest fifth part of the respective trench;
- a respective upper portion of both the control trench and the further trench being formed by the remaining four fifth parts of the respective trench, the upper portion of the control trench being arranged adjacent to the source region and the channel region;
- a total active intersection area is defined by a transition between the lower portion of the control trench and the barrier region;
- a total further intersection area is defined by a transition between the lower portion of the further trench and the barrier region;
- a total channel intersection area is defined by a transition between the upper portion of the control trench and a subregion formed by both the source region and the channel region in the active mesa;
- and
- the total channel intersection area is smaller than the sum of the active intersection area and the further intersection area.
13 more elements
Dependencies are inferred from the claim text.