Semiconductor structure and manufacturing method thereof

Abstract

A semiconductor structure including a substrate, a complementary metal oxide semiconductor (CMOS) device and a bipolar junction transistor (BJT) is provided. The CMOS device includes an N-type metal oxide semiconductor (NMOS) transistor and a P-type metal oxide semiconductor (PMOS) transistor disposed on the substrate. The BJT includes a collector, a base and an emitter. The collector is disposed in the substrate. The base is disposed on the substrate. The emitter is disposed on the base. A top surface of a channel of the NMOS transistor, a top surface of a channel of the PMOS transistor and a top surface of the collector of the BJT have the same height. The semiconductor structure can have better overall performance.

Dependencies are inferred from the claim text.